Application Notes
Noise In NVE Giant Magnetoresistive Sensors
The 1/f noise characteristic of NVE GMR sensors is approximately an order of magnitude higher than
noise for thin film resistors. The noise has been shown to follow the usual characteristics of being
proportional to the square of the current density. The figure below shows a noise plot of an AA002-02
sensor using various methods for powering the sensor:
100000
AA002-02 Spectrum Analysis 6/10/98
9V Battery
10000
1000
100
10
1.616 mA
18V Battery
3.233 mA
479 nA Blue
Box
498 uA Blue
Box
2.003 mA
Blue Box
0.01
0.1
1
10
100
1000
10000
100000
Log Frequency (Hz)
For use in low-field applications, the noise of the NVE GMR sensors limits the minimum signal
detected. For measuring low fields it is recommended that an AC modulation/demodulation scheme be
implemented. The figure below shows a block diagram of an AC modulation/demodulation circuit.
The phase shifter block is required to account for parasitic phase shift around the loop.
PHASE SHIFTER
SINE WAVE
GENERATOR
8 Vin+
5 Vout+
+
IN2
1 Vout-
RG
RG1
RG2
INST AMP
IN1
OUT
Rf
Vout
4 Vin-
-
Cf
- 105 -
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